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ESDR0502B Datasheet(PDF) 1 Page - ON Semiconductor

Part # ESDR0502B
Description  Transient Voltage Suppressor ESD Protection Diodes with Ultra?묹ow Capacitance
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESDR0502B Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 0
1
Publication Order Number:
ESDR0502B/D
ESDR0502B
Transient Voltage Suppressor
ESD Protection Diodes with Ultra−Low
Capacitance
The ESDR0502B is designed to protect voltage sensitive
components from damage due to ESD in applications that require ultra
low capacitance to preserve signal integrity. Excellent clamping
capability, low leakage and fast response time are combined with an
ultra low diode capacitance of 0.5 pF to provide best in class
protection from IC damage due to ESD. The small SC−75 package is
ideal for designs where board space is at a premium. The ESDR0502B
can be used to protect two uni−directional lines or one bi−directional
line. When used to protect one bi−directional line, the effective
capacitance is 0.25 pF. Because of its low capacitance, it is well suited
for protecting high frequency signal lines such as USB2.0 high speed
and antenna line applications.
Specification Features:
• Low Capacitance 0.5 pF Typical
• Low Clamping Voltage
• Small Body Outline Dimensions:
0.063” x 0.063” (1.60 mm x 1.60 mm)
• Low Body Height: 0.031″ (0.8 mm)
• Stand−off Voltage: 5 V
• Low Leakage
• Response Time is Typically < 1.0 ns
• IEC61000−4−2 Level 4 ESD Protection
• This is a Pb−Free Device
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH:
100% Matte Sn (Tin)
MOUNTING POSITION:
Any
QUALIFIED MAX REFLOW TEMPERATURE:
260
°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
IEC 61000−4−2 (ESD)
Contact
±8.0
kV
Peak Surge Power
(8 x 20 ms)
Ppk
20
W
Peak Surge Current
(8 x 20 ms)
Ipp
2.0
A
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
PD
150
mW
Storage Temperature Range
Tstg
−55 to +150
°C
Junction Temperature Range
TJ
−55 to +150
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
Device
Package
Shipping†
ORDERING INFORMATION
ESDR0502BT1G
SC−75
(Pb−Free)
3000/Tape & Reel
See specific marking information in the device marking
column of the Electrical Characteristics tables starting on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
SC−75
CASE 463
STYLE 4
MARKING
DIAGRAM
1 2
3
AD
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
AD M G
G
1


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