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N04L63W2AB27IT Datasheet(PDF) 5 Page - ON Semiconductor

Part # N04L63W2AB27IT
Description  4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 16 bit
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

N04L63W2AB27IT Datasheet(HTML) 5 Page - ON Semiconductor

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Rev. 10 | Page 5 of 10 | www.onsemi.com
N04L63W2A
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Output Load
CL = 30pF
Operating Temperature
-40 to +85 oC
Timing
Item
Symbol
-70
-55
Units
2.3 - 2.65 V
2.7 - 3.6 V
2.7 - 3.6 V
Min.
Max.
Min.
Max.
Min.
Max.
Read Cycle Time
tRC
85
70
55
ns
Address Access Time
tAA
85
70
55
ns
Chip Enable to Valid Output
tCO
85
70
55
ns
Output Enable to Valid Output
tOE
30
25
25
ns
Byte Select to Valid Output
tLB, tUB
85
70
55
ns
Chip Enable to Low-Z output
tLZ
10
10
10
ns
Output Enable to Low-Z Output
tOLZ
555
ns
Byte Select to Low-Z Output
tBZ
10
10
10
ns
Chip Disable to High-Z Output
tHZ
020
020
020
ns
Output Disable to High-Z Output
tOHZ
020
020
020
ns
Byte Select Disable to High-Z Output
tBHZ
020
020
020
ns
Output Hold from Address Change
tOH
10
10
10
ns
Write Cycle Time
tWC
85
70
55
ns
Chip Enable to End of Write
tCW
50
50
45
ns
Address Valid to End of Write
tAW
50
50
45
ns
Byte Select to End of Write
tBW
50
50
45
ns
Write Pulse Width
tWP
40
40
40
ns
Address Setup Time
tAS
000
ns
Write Recovery Time
tWR
000
ns
Write to High-Z Output
tWHZ
20
20
20
ns
Data to Write Time Overlap
tDW
40
40
40
ns
Data Hold from Write Time
tDH
000
ns
End Write to Low-Z Output
tOW
555
ns



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