SI2302

Micro Commercial Components

MCC

TM

Revision: 1

2008/01/01

2 of 5

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Forwand Transconductance

Gate Threshold Voltage

Static Drain-Source

On-Resistance

72

55

0.65

1.2

-100

100

1

m

Ω

V

nA

nA

µ

A

V

S

Gate Body Leakage Current, Reverse

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Turn-On Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Test Condition

Typ

Max

20

f = 1.0 MHz

237

120

45

23

11

34

36

45

30

70

70

6

1.4

1.8

10

0.94

1.2

8.5

110

82

m

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board,t<10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.