NTJD4152P datasheet(2/5 Pages) ONSEMI

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NTJD4152P

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = -250 mA

-20

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = -16 V

TJ = 25°C

1.0

TJ = 125°C

1.0

5.0

Gate-to-Source Leakage Current

IGSS

VDS = 0 V, VGS = ±4.5 V

0.03

1.0

VDS = 0 V, VGS = ±12 V

6.0

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = -250 mA

-0.45

Drain-to-Source On Resistance

RDS(on)

VGS = -4.5 V, ID = -0.88 A

215

260

VGS = -2.5 V, ID = -0.71 A

345

500

VGS = -1.8 V, ID = -0.20 A

600

1000

Forward Transconductance

gFS

VDS = -10 V, ID = -0.88 A

3.0

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = -20 V

155

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

VGS = -4.5 V, VDS = -10 V,

ID = -0.88 A

2.2

Gate-to-Source Charge

QGS

0.5

Gate-to-Drain Charge

QGD

0.65

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

td(ON)

VGS = -4.5 V, VDD = -10 V,

ID = -0.5 A, RG = 20 W

5.8

Rise Time

6.5

Turn-Off Delay Time

td(OFF)

13.5

Fall Time

3.5

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = -0.48 A

TJ = 25°C

-0.8

-1.2

TJ = 125°C

-0.66

3. Pulse Test: pulse width

≤ 300ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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