NTMFS4898NF

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

1.7

°C/W

Junction−to−Ambient – Steady State (Note 1)

46

Junction−to−Ambient – Steady State (Note 2)

134.2

Junction−to−Ambient − t v 10 sec

17.3

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

26

mV/°C

Zero Gate Voltage Drain Current

40

500

mA

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.5

2.5

V

Negative Threshold Temperature Coefficient

4

mV/°C

Drain−to−Source On Resistance

2.2

3.0

mW

2.2

3.4

4.8

3.4

Forward Transconductance

77

S

CHARGES AND CAPACITANCES

Input Capacitance

3233

pF

Output Capacitance

700

Reverse Transfer Capacitance

310

Total Gate Charge

24.5

nC

Threshold Gate Charge

3.2

Gate−to−Source Charge

10

Gate−to−Drain Charge

9

Total Gate Charge

49.5

nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

17.6

ns

Rise Time

23

Turn−Off Delay Time

28

Fall Time

8.3

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.