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PACDN009 Datasheet(PDF) 4 Page - ON Semiconductor

Part # PACDN009
Description  5-Channel ESD Protection Array
PDF  10 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

PACDN009 Datasheet(HTML) 4 Page - ON Semiconductor

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PACDN009
Rev. 3 | Page 4 of 10 | www.onsemi.com
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Supply Voltage (V
P - VN)
6.0
V
Diode Forward DC Current (Note 1)
20
mA
Operating Temperature Range
-40 to +85
°C
Storage Temperature Range
-65 to +150
°C
DC Voltage at any channel input
(V
N - 0.5) to (VP + 0.5)
V
Package Power Rating
200
mW
Note 1: Only one diode conducting at a time.
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
°C
Operating Supply Voltage (VP - VN)
0 to 5.5
V
ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
IP
Supply Current
(VP-VN)=5.5V
10
μA
VF
Diode Forward Voltage
IF = 20mA
0.65
0.95
V
VESD
ESD Protection
Peak Discharge Voltage at any channel
input, in system
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
c) Air Discharge per IEC 61000-4-2
Note 2
Notes 3
Note 4
Note 4
±15
±8
±15
kV
kV
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
@15kV ESD HBM
VP + 13.0
VN - 13.0
V
V
ILEAK
Channel Leakage Current
±0.1
±1.0
μA
CIN
Channel Input Capacitance
@ 1 MHz, VP=5V, VN=0V,
VIN=2.5V; Note 2 applies
3
5
pF
Note 1: All parameters specified at T
A=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted.
Note 2: From I/O pins to V
P or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for
more details).
Note 3: Human Body Model per MIL-STD-883, Method 3015, C
Discharge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded.
Note 4: Standard IEC 61000-4-2 with C
Discharge = 150pF, RDischarge = 330W, VP = 5.0V, VN grounded.



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