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PACDN009 Datasheet(PDF) 4 Page - ON Semiconductor |
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PACDN009 Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 10 page ![]() PACDN009 Rev. 3 | Page 4 of 10 | www.onsemi.com Specifications ABSOLUTE MAXIMUM RATINGS PARAMETER RATING UNITS Supply Voltage (V P - VN) 6.0 V Diode Forward DC Current (Note 1) 20 mA Operating Temperature Range -40 to +85 °C Storage Temperature Range -65 to +150 °C DC Voltage at any channel input (V N - 0.5) to (VP + 0.5) V Package Power Rating 200 mW Note 1: Only one diode conducting at a time. STANDARD OPERATING CONDITIONS PARAMETER RATING UNITS Operating Temperature Range -40 to +85 °C Operating Supply Voltage (VP - VN) 0 to 5.5 V ELECTRICAL OPERATING CHARACTERISTICS(SEE NOTE 1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS IP Supply Current (VP-VN)=5.5V 10 μA VF Diode Forward Voltage IF = 20mA 0.65 0.95 V VESD ESD Protection Peak Discharge Voltage at any channel input, in system a) Human Body Model, MIL-STD-883, Method 3015 b) Contact Discharge per IEC 61000-4-2 c) Air Discharge per IEC 61000-4-2 Note 2 Notes 3 Note 4 Note 4 ±15 ±8 ±15 kV kV kV VCL Channel Clamp Voltage Positive Transients Negative Transients @15kV ESD HBM VP + 13.0 VN - 13.0 V V ILEAK Channel Leakage Current ±0.1 ±1.0 μA CIN Channel Input Capacitance @ 1 MHz, VP=5V, VN=0V, VIN=2.5V; Note 2 applies 3 5 pF Note 1: All parameters specified at T A=25°C unless otherwise noted. VP = 5V, VN = 0V unless noted. Note 2: From I/O pins to V P or VN only. VP bypassed to VN with a 0.22μF ceramic capacitor (see Application Information for more details). Note 3: Human Body Model per MIL-STD-883, Method 3015, C Discharge = 100pF, RDischarge = 1.5KΩ, VP = 5.0V, VN grounded. Note 4: Standard IEC 61000-4-2 with C Discharge = 150pF, RDischarge = 330W, VP = 5.0V, VN grounded. |
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