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TTC007 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TTC007 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page  TTC007 2010-02-08 2 Electrical Characteristics (Ta = 25℃) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ― ― V hFE (1) VCE = 2 V, IC = 0.1 A 400 ― 1000 DC current gain hFE (2) VCE = 2 V, IC = 0.3 A 200 ― ― － Collector-emitter saturation voltage VCE (sat) IC = 0.3 A, IB = 6 mA ― ― 0.12 V Base-emitter saturation voltage VBE (sat) IC = 0.3 A, IB = 6 mA ― ― 1.1 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1MHz ― 5 ― pF Rise time tr ― 35 ― Storage time tstg ― 680 ― Switching time Fall time tf See Figure 1 VCC = 30 V, RL = 100 Ω IB1 = IB2 = 10 mA ― 85 ― ns Marking Figure 1. Switching Time Test Circuit Part No. (or abbreviation code) Lot code (month) Lot code (year) Dot: even year No Dot: odd year W G IB2 IB1 20 μs Output Input IB2 IB1 VCC Duty cycle < 1% 0 |
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