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4-8
RF2044
Rev A9 010110
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+13
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, ICC=65mA
Frequency Range
DC to >6000
MHz
3dB Bandwidth
3
GHz
Gain
20.4
dB
Freq= 100MHz
19.3
20.3
21.3
dB
Freq= 850MHz
16.5
19.0
dB
Freq= 2000MHz
17.5
dB
Freq= 3000MHz
16.6
Freq= 4000MHz
14.3
Freq= 6000MHz
Gain Flatness
±0.7
dB
100MHz to 2000MHz
Noise Figure
4.1
dB
Freq= 1000MHz
Input VSWR
<1.4:1
In a 50
Ω system, DC to 5000MHz
<1.7:1
In a 50
Ω system, 5000MHz to 6000MHz
Output VSWR
<1.2:1
In a 50
Ω system, DC to 3000MHz
<1.8:1
In a 50
Ω system, 3000MHz to 6000MHz
Output IP3
+30.0
+33.5
dBm
Freq= 1000MHz
Output P1dB
+18.5
dBm
Freq= 1000MHz
Reverse Isolation
22.3
dB
Freq= 1000MHz
Thermal
ICC=65mA, PDISS=300mW
ThetaJC
188
°C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
143
°C
TAMB=+85°C
Mean Time Between Failures
1.3x103
years
TAMB=+85°C
3.1x105
years
TAMB=+25°C
1.6x109
years
TAMB=-40°C
Power Supply
With 22
Ω bias resistor
Device Operating Voltage
4.3
4.8
5.3
V
At pin 3 with ICC=65mA
Operating Current
60
65
80
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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