4-99
4
Preliminary
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
VCC
GND
GND
RF IN
RF2322
• Broadband Gain Blocks
• Final PA for Low-Power Applications
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
The RF2322 is a general purpose, low-cost silicon ampli-
fier designed for operation from a 3V supply. The circuit
configuration with resistive feedback allows for broad-
band cascadable amplification. Capacitive compensation
extends the bandwidth of the amplifier and input stage
design optimizes noise figure. The device is uncondition-
ally stable and internally matched to 50
Ω. The only exter-
nal components required for specified performance are
bypass and DC blocking capacitors (as shown in applica-
tion schematic). The RF2322 is available in a very small
industry-standard SOT-23 5-lead surface mount package,
enabling compact designs which conserve board space.
• DC to >2000MHz Operation
• 2.7V to 3.3V Single Supply
• +3dBm Output IP3
• 19dB Gain at 900MHz
• 12dB Gain at 1900MHz
• High Isolation (38dB at 900MHz)
RF2322
3V General Purpose Amplifier
RF2322 PCBA
Fully Assembled Evaluation Board
Rev A2 990111
.071
.059
.020
.014
.118
.102
.083
.067
.010
.004
.051
.039
.004
.000
.008 MIN
.122
.106
1
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