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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2325
3V GENERAL PURPOSE AMPLIFIER
• Broadband Gain Blocks
• Final PA for Low-Power Applications
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Oscillator Loop Amplifiers
The RF2325 is a general purpose, low-cost silicon ampli-
fier designed for operation from a 3 V supply. The Darling-
ton circuit configuration with resistive feedback allows for
broadband cascadable amplification. The device is
unconditionally stable and internally matched to 50
Ω.The
only external components required for specified perfor-
mance are bypass and DC blocking capacitors and two
bias elements (as shown in application schematic). The
RF2325 is available in a very small industry-standard
SOT-23 5-lead surface mount package, enabling compact
designs which conserve board space.
• DC to >2000MHz Operation
• 2.7V to 3.3V Single Supply
• +17dBm Output IP3
•16dB Gain at 900MHz
•12dB Gain at 1900MHz
• Internally 50
Ω Matched Input and Output
RF2325
3V General Purpose Amplifier
RF2325 PCBA
Fully Assembled Evaluation Board
4
Rev A4 010720
1
1.60
+0.01
0.400
2.80
+0.20
2.90
+0.10
0.45
+0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
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