RTM2302 datasheet(2/4 Pages) SIRECT

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Electrical Characteristics

Rate ID = 2.4A, (Ta = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

Drain-Source On-State Resistance

VGS = 4.5V, ID = 3.6A

RDS(ON)

Drain-Source On-State Resistance

VGS = 2.5V, ID = 3.1A

RDS(ON)

mΩ

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

0.45

Zero Gate Voltage Drain Current

VDS = 20V, VGS = 0V

IDSS

1.0

Gate Body Leakage

VGS = ± 8V, VDS = 0V

IGSS

± 100

On-State Drain Current

VDS ≧ 5V, VGS = 4.5V

ID(ON)

Forward Transconductance

VDS = 5V, ID = 3.6A

gfs

Dynamic

Total Gate Charge

5.2

Gate-Source Charge

Qgs

0.65

Gate-Drain Charge

VDS = 10V, ID = 3.6A,

VGS = 4.5V

Qgd

1.5

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD = 10V, RL = 10Ω,

ID = 1A, VGEN = 4.5V,

RG = 6Ω

Input Capacitance

Ciss

450

Output Capacitance

Coss

Reverse Transfer Capacitance

VDS = 10V, VGS = 0V,

f = 1.0MHz

Crss

Source-Drain Diode

Max. Diode Forward Current

1.6

Diode Forward Voltage

IS = 1.0A, VGS = 0V

VSD

0.75

1.2

Note : pulse test: pulse width <=300uS, duty cycle <=2%

RTM2302

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