74LVCV2G66DC datasheet(6/23 Pages) NXP

6 / 23 page

74LVCV2G66

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 3 — 16 June 2010

6 of 23

NXP Semiconductors

74LVCV2G66

Overvoltage tolerant bilateral switch

10.1 Test circuits

10.2 ON resistance

[1]

All typical values are measured at Tamb = 25 °C and nominal VCC.

[2]

Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and

temperature.

VI = GND and VO =GND or 5.5V.

VI = 5.5 V or GND and VO = open circuit.

Fig 6.

Test circuit for measuring OFF-state leakage

current

Fig 7.

Test circuit for measuring ON-state leakage

current

001aag488

VIL

VCC

GND

001aag489

VIH

VCC

GND

Table 8.

Resistance RON

At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graphs see Figure 9 and Figure 10.

Symbol

Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

RON(peak)

ON resistance

(peak)

VSW =GND to VCC; VI =VIH;

see Figure 8

ISW =8mA; VCC = 2.3 V to 2.7 V

ISW =12mA; VCC =2.7 V

ISW =24mA; VCC = 3.0 V to 3.6 V

8.3

ISW =32mA; VCC = 4.5 V to 5.5 V

7.4

RON(rail)

ON resistance (rail)

VSW = GND; VI =VIH; see Figure 8

ISW =8mA; VCC = 2.3 V to 2.7 V

8.5

ISW =12mA; VCC =2.7 V

8.0

ISW =24mA; VCC = 3.0 V to 3.6 V

7.5

ISW =32mA; VCC = 4.5 V to 5.5 V

7.3

VSW =VCC; VI =VIH

ISW =8mA; VCC = 2.3 V to 2.7 V

8.5

ISW =12mA; VCC =2.7 V

7.2

ISW =24mA; VCC = 3.0 V to 3.6 V

6.5

ISW =32mA; VCC = 4.5 V to 5.5 V

5.7

RON(flat)

ON resistance

(flatness)

VSW =GND to VCC; VI =VIH

[2]

ISW =8mA; VCC =2.5 V

ISW =12mA; VCC =2.7 V

ISW =24mA; VCC =3.3 V

ISW =32mA; VCC =5.0 V

74LVCV2G66DC Datasheet(PDF) 6 Page - NXP Semiconductors

74LVCV2G66DC Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23

Datasheet Download

Link URL