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SST25VF032B Datasheet(PDF) 11 Page - Silicon Storage Technology, Inc |
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SST25VF032B Datasheet(HTML) 11 Page - Silicon Storage Technology, Inc |
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11 / 28 page ![]() Data Sheet 32 Mbit SPI Serial Flash SST25VF032B 11 ©2009 Silicon Storage Technology, Inc. S71327-03-000 05/09 Auto Address Increment (AAI) Word-Program The AAI program instruction allows multiple bytes of data to be programmed without re-issuing the next sequential address location. This feature decreases total program- ming time when multiple bytes or entire memory array is to be programmed. An AAI Word program instruction pointing to a protected memory area will be ignored. The selected address range must be in the erased state (FFH) when ini- tiating an AAI Word Program operation. While within AAI Word Programming sequence, the only valid instructions are AAI Word (ADH), RDSR (05H), or WRDI (04H). Users have three options to determine the completion of each AAI Word program cycle: hardware detection by reading the Serial Output, software detection by polling the BUSY bit in the software status register or wait TBP. Refer to End- Of-Write Detection section for details. Prior to any write operation, the Write-Enable (WREN) instruction must be executed. The AAI Word Program instruction is initiated by executing an 8-bit command, ADH, followed by address bits [A23-A0]. Following the addresses, two bytes of data is input sequentially, each one from MSB (Bit 7) to LSB (Bit 0). The first byte of data (D0) will be programmed into the initial address [A23-A1] with A0 = 0, the second byte of Data (D1) will be programmed into the initial address [A23-A1] with A0 = 1. CE# must be driven high before the AAI Word Program instruction is executed. The user must check the BUSY status before entering the next valid command. Once the device indicates it is no longer busy, data for the next two sequential addresses may be programmed and so on. When the last desired byte had been entered, check the busy status using the hardware method or the RDSR instruction and execute the Write-Disable (WRDI) instruction, 04H, to terminate AAI. Check the busy status after WRDI to determine if the device is ready for any command. See Figures 10 and 11 for AAI Word programming sequence. There is no wrap mode during AAI programming; once the highest unprotected memory address is reached, the device will exit AAI operation and reset the Write-Enable- Latch bit (WEL = 0) and the AAI bit (AAI = 0). End-of-Write Detection There are three methods to determine completion of a pro- gram cycle during AAI Word programming: hardware detection by reading the Serial Output, software detection by polling the BUSY bit in the Software Status Register or wait TBP. The hardware end-of-write detection method is described in the section below. Hardware End-of-Write Detection The hardware end-of-write detection method eliminates the overhead of polling the Busy bit in the Software Status Register during an AAI Word program operation. The 8-bit command, 70H, configures the Serial Output (SO) pin to indicate Flash Busy status during AAI Word programming, as shown in Figure 8. The 8-bit command, 70H, must be executed prior to executing an AAI Word-Program instruc- tion. Once an internal programming operation begins, asserting CE# will immediately drive the status of the inter- nal flash status on the SO pin. A ‘0’ indicates the device is busy and a ‘1’ indicates the device is ready for the next instruction. De-asserting CE# will return the SO pin to tri- state. The 8-bit command, 80H, prevents the Serial Output (SO) pin from outputting Busy status during AAI-Word-program operation and re-configures SO as an output pin. The device can only accept the 80H command when the device is not in AAI mode. Once SO is an output pin, in AAI mode the device can accept both RDSR instruction for polling and Software Status Register data outputs through the SO pin. This is shown in Figure 9. FIGURE 8: Enable SO as Hardware RY/BY# during AAI Programming FIGURE 9: Disable SO as Hardware RY/BY# during AAI Programming CE# SO SI SCK 01 2 3 4 5 6 7 70 HIGH IMPEDANCE MODE 0 MODE 3 1327 F09.0 MSB CE# SO SI SCK 01 2 3 4 5 6 7 80 HIGH IMPEDANCE MODE 0 MODE 3 1327 F10.0 MSB |
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