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IRG4PC50SDPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC50SDPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PC50SDPbF 2 www.irf.com Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V (BR)CES/ ∆T J Temperature Coeff. of Breakdown Voltage —0.75 — V/°C VGE = 0V, IC = 1mA (25°C-150°C) — 1.28 1.36 IC = 41A, VGE = 15V, TJ = 25°C 2 VCE(on) Collector-to-Emitter Saturation Voltage — 1.62 — V IC = 80A, VGE = 15V, TJ = 25°C —1.25 — IC = 41A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 250µA 3 ∆V GE(th)/ ∆TJ Threshold Voltage temp. coefficient — -9.3 — mV/°C VCE = VGE, IC = 250µA (25°C - 150°C) gfe Forward Transconductance 17 34 — S VCE = 100V, IC = 41A —— 250 VGE = 0V, VCE = 600V ICES Collector-to-Emitter Leakage Current — — 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop — 1.3 1.7 V IF = 25A 13 —1.2 1.5 IF = 25A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 180 280 IC = 41A 8 Qge Gate-to-Emitter Charge (turn-on) — 24 37 nC VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 61 92 VCC = 400V Eon Turn-On Switching Loss — 0.72 — IC = 41A, VCC = 480V, VGE = 15V 18a, 18b Eoff Turn-Off Switching Loss — 8.27 — mJ RG = 5.0 Ω, TJ = 25°C 18c Etotal Total Switching Loss — 8.99 13 Energy losses include tail & diode reverse recovery td(on) Turn-On delay time — 33 — IC = 41A, VCC = 480V, VGE = 15V 18a, 18b tr Rise time — 30 — ns RG = 5.0 Ω, L = 200µH, TJ = 25°C 18c td(off) Turn-Off delay time — 650 980 tf Fall time — 400 600 Etotal Total Switching Loss — 15 — mJ td(on) Turn-On delay time — 31 — IC = 41A, VCC = 480V, VGE = 15V 18a, 18b tr Rise time — 31 — ns RG = 5.0 Ω, L = 200µH 18c td(off) Turn-Off delay time — 1080 — TJ = 150°C tf Fall time — 620 — Cies Input Capacitance — 4100 — pF VGE = 0V 7 Coes Output Capacitance — 250 — VCC = 30V Cres Reverse Transfer Capacitance — 48 — f = 1.0Mhz trr Diode Reverse Recovery Time — 50 75 ns TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs 14 105 160 TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs 18a, 18d Irr Peak Reverse Recovery Current — 4.5 10 A TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs 15 —8.0 15 TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs 18a, 18d Qrr Peak Reverse Recovery Current — 112 375 nC TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs 16 — 420 1200 TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs 18a, 18d di(rec)M/dt Peak Rate of Fall of Recovery During tb —250 — A/µs TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs 17 —160 — TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs Conditions Notes: Repetitive rating: VGE=15V; pulse width limited by maximum junction temperature. (See figure 20) VCC=80%(VCES), VGE=15V, RG = 5.0Ω. (See figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. |
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