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HS-26CLV32RH Datasheet(PDF) 2 Page - Intersil Corporation |
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HS-26CLV32RH Datasheet(HTML) 2 Page - Intersil Corporation |
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2 / 3 page  2 Die Characteristics DIE DIMENSIONS: 84 mils x 130 mils x 21 mils (2140 µm x 3290µm) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorus Silicon Glass) Thickness: 8k Å ± 1kÅ Substrate: AVLSI1RA, Silicon backside, VDD backside potential Metallization: Bottom: Mo/Tiw Thickness: 5800 Å ±1kÅ Top: Al/Si/Cu Thickness: 10k Å ±1kÅ Worst Case Current Density: <2.0 x 105A/cm2 Bond Pad Size: 110 µm x 100µm Metallization Mask Layout HS-26CLV32RH AIN VDD BIN AIN (2) AOUT (3) ENAB (4) COUT (5) CIN (6) (8) (9) (14) BIN (13) BOUT (12) ENAB (11) DOUT (10) DIN (1) (16) (15) (7) CIN GND DIN HS-26CLV32RH |
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