STU40N2LH5 datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STD40N2LH5, STU40N2LH5

4/15

Doc ID 14919 Rev 3

Electrical characteristics

(TCASE = 25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 25 V

VDS = 25 V, TC = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 20 A

SMD version

0.01

0.0118

Ω

VGS= 10 V, ID= 20 A

0.0106 0.0124

Ω

VGS= 5 V, ID= 20 A

SMD version

0.0135 0.0155

Ω

VGS= 5 V, ID= 20 A

0.0141 0.0161

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 20 V, f=1 MHz,

VGS = 0

700

160

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 40 A

VGS = 5 V

(Figure 14)

6.3

2.4

2.7

Table 6.

Switching on/off (resistive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD= 10 V, ID= 20 A,

RG= 4.7 Ω, VGS= 10 V

(Figure 13 and Figure 18)

4.8

13.6

td(off)

Turn-off delay time

Fall time

VDD= 10 V, ID= 20 A,

RG= 4.7 Ω, VGS= 10 V

(Figure 13 and Figure 18)

17.6

3.5

STU40N2LH5 Datasheet(PDF) 4 Page - STMicroelectronics

STU40N2LH5 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL