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S2D Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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S2D Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() S2A ~ S2M SURFACE MOUNT RECTIFIERS PRV : 50 - 1000 Volts Io : 1.5 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : SMB Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Indicated by cathode band * Mounting position : Any * Weight : 0.093 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL S2A S2B S2D S2G S2J S2K S2M UNIT Maximum Repetitive Peak Reverse VoltageVRRM 50 100 200 400 600 800 1000V Maximum RMS VoltageVRMS 35 70 140 280 420 560 700V Maximum DC Blocking VoltageVDC 50 100 200 400 600 800 1000V Maximum Average Forward Current (See fig. 1)IF 1.5A Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) TL = 100 °C Maximum Instantaneous Forward Voltage at IF = 1.5 A.VF 1.15V Maximum DC Reverse Current Ta = 25 °C IR µA at rated DC Blocking Voltage Ta = 125 °C IR(H) 125 µA Typical Reverse Recovery Time (Note 1) Trr 2.0 µs R θJA °C/W R θJL °C/W Typical Junction Capacitance at 4.0V, 1 MHz (Note 3)CJ 30 pF Junction Temperature RangeTJ - 55 to + 150 °C Storage Temperature RangeTSTG - 55 to + 150 °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas (3) Mesured at 1.0 Mhz and applied Vr=4.0 volts Page 1 of 2 Rev. 02 : March 25, 2005 A Typical thermal resistance (Note 2) RATING IFSM 50 1.0 100 20 0.22 0.07 2.0 ± 0.1 2.3 ± 0.2 3.6 ± 0.15 SMB (DO-214AA) Dimensions in millimeter 1.1 0.3 ± ± * Pb / RoHS Free |
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