410 datasheet(66/71 Pages) INTEL

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Thermal Specifications and Design Considerations

Datasheet

on-die temperature gradients between the location of the thermal diode and the hottest

location on the die, and time based variations in the die temperature measurement.

Time based variations can occur when the sampling rate of the thermal diode (by the

thermal sensor) is slower than the rate at which the TJ temperature can change.

Offset between the thermal diode-based temperature reading and the Intel Thermal

Monitor reading may be characterized using the Intel Thermal Monitor’s Automatic

mode activation of thermal control circuit. This temperature offset must be taken into

account when using the processor thermal diode to implement power management

events. This offset is different than the diode Toffset value programmed into the Intel

Core Duo and Intel Core Solo processors’ MSR.

Table 18, Table 19, Table 20, and Table 21 provide the diode interface and

specifications. Two different sets of diode parameters are listed in Table 19 and

Table 20. The Diode Model parameters (Table 19) apply to traditional thermal sensors

that use the Diode Equation to determine the processor temperature. Transistor Model

parameters (Table 20) have been added to support thermal sensors that use the

transistor equation method. The Transistor Model may provide more accurate

temperature measurements when the diode ideality factor is closer to the maximum or

minimum limits. Please contact your external thermal sensor supplier for their

recommendation. This thermal diode is separate from the Intel Thermal Monitor's

thermal sensor and cannot be used to predict the behavior of the Intel Thermal Monitor.

NOTES:

Intel does not support or recommend operation of the thermal diode under reverse bias.

Intel does not support or recommend operation of the thermal diode when the processor

power supplies are not within their specified tolerance range.

Characterized across a temperature range of 50 – 100°C.

Not 100% tested. Specified by design characterization.

The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by

the diode equation:

IFW = IS * (e

/nkT –1)

where IS = saturation current, q = electronic charge, VD = voltage across the diode, k =

Boltzmann Constant, and T = absolute temperature (Kelvin).

Table 18.

Thermal Diode Interface

Signal Name

Pin/Ball Number

Signal Description

THERMDA

A24

Thermal diode anode

THERMDC

A25

Thermal diode cathode

Table 19.

Thermal Diode Parameters using Diode Model

Symbol

Parameter

Min

Typ

Max

Unit

Notes

IFW

Forward Bias Current

200

µA

Diode Ideality Factor

1.000

1.009

1.050

2, 3, 4

Series Resistance

2.79

4.52

6.24

2, 3, 5

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