STP6NK70Z datasheet(5/16 Pages) STMICROELECTRONICS

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STP6NK70Z - STF6NK70Z - STW6NK70Z

Electrical characteristics

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Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

700

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating,

VDS = Max rating, Tc=125°C

µA

IGSS

Gate body leakage current

(VGS = 0)

VGS = ± 20V

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.5 A

1.5

1.8

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance VDS =15V, ID = 2.5A

4.4

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

930

105

Cosseq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 560V

td(on)

td(off)

Turn-on delay time

Rise time

Off-voltage rise time

Fall time

VDD=350 V, ID= 2.5 A,

RG=4.7Ω, VGS=10V

(see Figure 18)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=560V, ID = 5A

VGS =10V

(see Figure 19)

6.5

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