STP5NK100Z datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STP5NK100Z, STF5NK100Z, STW5NK100Z

4/15

Doc ID 10850 Rev 5

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

1000

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

Tc = 125 °C

µA

IGSS

Gate body leakage current

(VGS = 0)

VGS = ± 20 V

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 1.75 A

2.7

3.7

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance VDS =15 V, ID = 1.75 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1154

106

21.3

Cosseq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0 V to 800 V

46.8

td(on)

td(off)

Turn-on delay time

Rise time

Off-voltage rise time

Fall time

VDD=500 V, ID= 1.75 A,

RG=4.7 Ω, VGS=10 V

(see Figure 21)

22.5

7.7

51.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=800 V, ID = 3.5 A

VGS =10 V

(see Figure 22)

7.3

21.7

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