STGD10NC60KDT4 datasheet(5/20 Pages) STMICROELECTRONICS

5 / 20 page

STGx10NC60KD

Electrical characteristics

Doc ID 11423 Rev 6

5/20

Electrical characteristics

(Tj =25°C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE= 0)

IC= 1mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 5A

VGE= 15V, IC= 5A, Tj= 125°C

2.2

1.8

2.5

VGE(th)

Gate threshold voltage

VCE= VGE, IC= 250µA

4.5

6.5

ICES

Collector cut-off current

(VGE = 0)

VCE= 600 V

VCE=600 V, Tj = 125°C

150

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE= ±20V

±100

gfs

(1)

Pulse test: pulse duration < 300 µs, duty cycle < 2 %

Forward transconductance

VCE = 15V, IC= 5A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

380

8.5

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 5A,

VGE = 15V,

(see Figure 19)

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