STP60N3LH5 datasheet(5/16 Pages) STMICROELECTRONICS

Part #	STP60N3LH5

Description	N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 16 page

STD60N3LH5, STP60N3LH5, STU60N3LH5

Electrical characteristics

Doc ID 14079 Rev 3

5/16

Table 6.

Switching on/off (resistive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD=10 V, ID= 24 A,

RG=4.7 Ω, VGS= 10 V

(Figure 13 and

Figure 18)

td(off)

Turn-off delay time

Fall time

VDD=10 V, ID= 24 A,

RG=4.7 Ω, VGS= 10 V

(Figure 13 and

Figure 18)

4.2

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain current

Source-drain current (pulsed)(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

192

VSD

Forward on voltage

ISD=24 A, VGS=0

1.1

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=48 A,

di/dt =100 A/µs,

VDD=20 V, (Figure 15)

18.5

1.5

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