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BAV102 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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BAV102 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  BAV100 ~ BAV103 HIGH SPEED SWITCHING DIODES FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max. 625 mA. • Pb / RoHS Free MECHANICAL DATA : Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Symbol Value Unit BAV100 60 BAV101 120 BAV102 200 BAV103 250 BAV100 50 BAV101 100 BAV102 150 BAV103 200 Maximum Repetitive Peak Forward Current IFRM 625 mA Maximum Continuous Forward Current IF mA at t = 100 µs , Tj = 25°C 3.0 at t = 1s , Tj = 25 °C 1.0 Maximum Power Dissipation PD 400 mW Maximum Junction Temperature TJ 175 °C Storage Temperature Range TS -65 to + 175 °C Electrical Characteristics (T J = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit VR = 50 V - - 100 VR = 100 V - - 100 VR = 150 V - - 100 VR = 200 V - - 100 IF = 100 mA - - 1.0 IF = 200 mA - - 1.25 Diode Capacitance Cd - - 5.0 pF IF = 30 mA to IR = 30mA RL = 100 Ω ; measured at IR = 3mA Page 1 of 2 Rev. 02 : March 25, 2005 ns 50 f = 1MHz ; VR = 0 - - Reverse Recovery Time Trr IR Forward Voltage VF Parameter Maximum Continuous Reverse Voltage VR V Maximum Repetitive Peak Reverse Voltage VRRM V Maximum Surge Forward Current 250 V nA IFSM A Reverse Current Test Condition 0.142(3.6) 0.134(3.4) φ 0.063 (1.64) 0.055 (1.40) 0.019(0.48) 0.011(0.28) Cathode Mark MiniMELF (SOD-80C) 0.098 (2.50) Max. Dimensions in inches and ( millimeters ) Mounting Pad Layout 0.049 (1.25)Min. 0.197 (5.00) REF 0.079 (2.00)Min. |
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