1

2

4

3

Product Name Package

Pin Configuration

Marking

BFP720F

TSFP-4

1 = B

2 = E

3 = C

4 = E

R9s

SiGe:C Heterojunction Wideband RF Bipolar Transistor

Data Sheet

7

Revision 1.0, 2009-03-13

1

Features

Main features:

•

High performance general purpose wideband LNA transistor

•

150 GHz fT-Silicon Germanium Carbon technology

•

Enables Best-In-Class performance for wireless applications due to

high dynamic range

•

Transistor geometry optimized for low-current applications

•

Operation voltage: 1.0 V to 4.0 V

•

Very high gain at high frequencies and low current consumption

•

26.5 dB maximum stable gain at 1.9 GHz and only 13 mA

•

15 dB maximum available gain at 10 GHz and only 13 mA

•

Ultra low noise figure from latest SiGe:C technology

•

0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz

•

High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and low current consumption of 13 mA

•

Pb-free (RoHS compliant) package

Applications

FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi,

Cordless phone, UMTS, WLAN, UWB, LNB.

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions