BSC028N06LS3 datasheet(3/9 Pages) INFINEON

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BSC028N06LS3 G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

10000

13000 pF

Output capacitance

C oss

1700

2300

Reverse transfer capacitance

Crss

-70-

Turn-on delay time

t d(on)

-19-

Rise time

t r

-17-

Turn-off delay time

t d(off)

-77-

Fall time

t f

-19-

Gate Charge Characteristics

Gate to source charge

Q gs

-31-

Gate charge at threshold

Q g(th)

-17-

Gate to drain charge

Q gd

-10-

Switching charge

Q sw

-24-

Gate charge total

Q g

-59

Gate plateau voltage

V plateau

3.1

Gate charge total

Q g

V DD=30 V, I D=50 A,

V GS=0 to 10 V

132

175

Output charge

Q oss

V DD=30 V, V GS=0 V

110

Reverse Diode

Diode continuous forward current

I S

100

Diode pulse current

I S,pulse

400

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

0.8

1.2

Reverse recovery time

t rr

-47-

Reverse recovery charge

Q rr

-58-

5) See figure 16 for gate charge parameter definition

V R=30 V, I F=30A,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=30 V,

f =1 MHz

V DD=30 V, V GS=10 V,

I D=30 A, R G=3.3 Ω

V DD=30 V, I D=50 A,

V GS=0 to 4.5 V

Rev. 2.2

page 3

2009-10-22

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