BSO150N03MDG datasheet(3/9 Pages) INFINEON

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BSO150N03MD G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

970

1300

Output capacitance

C oss

340

450

Reverse transfer capacitance

Crss

-20-

Turn-on delay time

t d(on)

7.3

Rise time

t r

3.8

Turn-off delay time

t d(off)

8.7

Fall time

t f

4.2

Gate Charge Characteristics

Gate to source charge

Q gs

2.8

Gate charge at threshold

Q g(th)

1.5

Gate to drain charge

Q gd

1.4

Switching charge

Q sw

2.6

Gate charge total

Q g

6.1

Gate plateau voltage

V plateau

2.9

Gate charge total

Q g

V DD=15 V, I D=9.3 A,

V GS=0 to 10 V

12.6

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

5.3

7.0

Output charge

Q oss

V DD=15 V, V GS=0 V

8.9

Reverse Diode

Diode continuous forward current

I S

2.4

Diode pulse current

I S,pulse

Diode forward voltage

V SD

V GS=0 V, I F=9.3 A,

T j=25 °C

0.87

1.1

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

4) See figure 16 for gate charge parameter definition

T A=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=4.5 V,

I D=9.3 A, R G=1.6 Ω

V DD=15 V, I D=9.3 A,

V GS=0 to 4.5 V

Rev.1.1

page 3

2009-11-19

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