BGS13AL12

SP3T RF Switch

Features

Preliminary Data Sheet

8

Revision 1.1, 2009-06-25

Description

The BGS13AL12 RF MOS switch is specifically designed for WCDMA diversity applications. An additional 4th port

allows proper termination of the antenna when turned off.

This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port, while

maintaining a very small size of only 2.0 x 2.0 mm² and a maximum height of only 0.4 mm

The on-chip controller integrates CMOS logic and level shifters, driven by control inputs from 1.4 to 3.0 V. Unlike

GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied

externally.

The BGS13AL12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of

GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

Figure 1

Functional Diagram

BGS 13A_Functional_ D iagram m .vsd

RF1

RF2

Ant

Vdd

Ctrl A

Decoder

+ESD

Rext

Ctrl B

GND

RF3