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IRGI4045DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGI4045DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRGI4045DPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 28 μH, RG = 47 Ω Pulse width limited by max. junction temperature. Rθ is measured at TJ approximately 90°C Refer to AN-1086 for guidelines for measuring V(BR)CES safely Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V,Ic =100 μA f ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage —0.75 — V/°C VGE = 0V, Ic = 250 μA ( -55°C to 150 oC ) f — 1.70 2.0 IC = 6A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 2.01 — V IC = 6A, VGE = 15V, TJ = 125°C —2.10 — IC = 6A, VGE = 15V, TJ = 150°C VGE(th) Gate Threshold Voltage 4.0 6.5 V VCE = VGE, IC = 150 μA ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -14 —mV/°C VCE = VGE, IC = 1.0mA ( -55°C to 150 oC ) gfe Forward Transconductance — 3.5 — S VCE = 50V, IC = 6A, PW =80μs ICES —— 25 μA VGE = 0V,VCE = 600V — — 250 μA VGE = 0v, VCE = 600V, TJ =150°C VFM — 1.60 2.3 V IF = 6A —1.33 — IF = 6A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ± 20 V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Total Gate Charge (turn-on) — 13 20 IC = 6A Qge Gate-to-Emitter Charge (turn-on) — 3.3 5.0 nC VCC = 400V Qgc Gate-to-Collector Charge (turn-on) — 5.9 8.9 VGE = 15V Eon Turn-On Switching Loss — 64 169 IC = 6A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 123 229 μJRG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C Etotal Total Switching Loss — 187 296 Energy losses include tail and diode reverse recovery td(on) Turn-On delay time — 26 35 IC = 6A, VCC = 400V tr Rise time — 13 22 ns RG = 47Ω, L=1mH, LS= 150nH td(off) Turn-Off delay time — 73 84 TJ = 25°C tf Fall time — 19 28 Eon Turn-On Switching Loss — 126 — IC = 6A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 169 — μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 150°C Etotal Total Switching Loss — 294 — Energy losses include tail and diode reverse recovery td(on) Turn-On delay time — 25 — IC = 6A, VCC = 400V tr Rise time — 13 —ns RG = 47Ω, L=1mH, LS= 150nH td(off) Turn-Off delay time — 86 —TJ = 150°C tf Fall time — 30 — Cies Input Capacitance — 354 — VGE = 0V Coes Output Capacitance — 29 — VCC = 30V Cres Reverse Transfer Capacitance — 9.4 — f = 1Mhz TJ = 150°C, IC = 24A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V Rg =47 Ω, VGE = +20V to 0V VCC = 400V, Vp =600V RG = 47Ω, VGE = +15V to 0V Erec Reverse recovery energy of the diode — 147 — μJ TJ = 150 oC trr Diode Reverse recovery time — 73 — ns VCC = 400V, IF = 6A Irr Peak Reverse Recovery Current — 11 — A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH — Diode Forward Voltage Drop Collector-to-Emitter Leakage Current SCSOA Short Circuit Safe Operating Area 5 — μs pF Conditions |
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