Data Sheet

5

V3.2, 2009-05-27

BGA751L7 - Low Power Single-Band UMTS LNA

Description

1

Description

The BGA751L7 is a low current single-band low noise amplifier MMIC for UMTS bands V, VI and VIII. The LNA is

based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1

leadless green package. Because the matching is off chip, the 800 MHz path can be easily converted into a 900

MHz path by optimizing the input and output matching network. This document specifies the electrical parameters,

pinout, application circuit and packaging of the chip.

Figure 1

Block diagram of single-band LNA

Features

•

Gain: 16 / -8 dB in high / low gain mode

•

Noise figure: 1.05 dB in high gain mode

•

Supply current: 3.3 / 0.5 mA in high / low gain mode

•

Standby mode (< 2

µA typ.)

•

Output internally matched to 50

Ω

•

Inputs pre-matched to 50

Ω

•

2kV HBM ESD protection

•

Low external component count

•

Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm)

•

Pb-free (RoHS compliant) package

TSLP-7-1 package

Type

Package

Marking

Chip

BGA751L7

TSLP-7-1

B5

T1533