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IRFS3107PBF Datasheet(PDF) 1 Page - International Rectifier |
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IRFS3107PBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 10 page  10/7/08 www.irf.com 1 HEXFET® Power MOSFET Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits S D G GD S Gate Drain Source PD -97144 IRFS3107PbF IRFSL3107PbF D S G D2Pak IRFS3107PbF S D G D TO-262 IRFSL3107PbF VDSS 75V RDS(on) typ. 2.5m: max. 3.0m: ID (Silicon Limited) 230A c ID (Package Limited) 195A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dv/dt Peak Diode Recovery f V/ns TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case kl ––– 0.40 RθJA Junction-to-Ambient (PCB Mount) jk ––– 40 °C/W A °C 300 300 See Fig. 14, 15, 22a, 22b, 370 14 Max. 230 c 160 900 195 -55 to + 175 ± 20 2.5 10lb xin (1.1Nxm) |
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