BSC080N03LSG datasheet(3/10 Pages) INFINEON

3 / 10 page

BSC080N03LS G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

1300

1700

Output capacitance

C oss

510

680

Reverse transfer capacitance

Crss

-25-

Turn-on delay time

t d(on)

3.3

Rise time

t r

2.8

Turn-off delay time

t d(off)

-15-

Fall time

t f

2.6

Gate Charge Characteristics

Gate to source charge

Q gs

4.0

5.3

Gate charge at threshold

Q g(th)

1.9

2.6

Gate to drain charge

Q gd

1.8

3.0

Switching charge

Q sw

3.9

5.8

Gate charge total

Q g

7.5

10.0

Gate plateau voltage

V plateau

3.4

Gate charge total

Q g

V DD=15 V, I D=30 A,

V GS=0 to 10 V

-16

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 4.5 V

6.5

8.6

Output charge

Q oss

V DD=15 V, V GS=0 V

-13

Reverse Diode

Diode continuous forward current

I S

Diode pulse current

I S,pulse

212

Diode forward voltage

V SD

V GS=0 V, I F=30 A,

T j=25 °C

0.88

1.1

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

5) See figure 16 for gate charge parameter definition

4) See figure 13 for more detailed information

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=30 A, R G=1.6 Ω

V DD=15 V, I D=30 A,

V GS=0 to 4.5 V

Rev. 1.25

page 3

2009-11-03

BSC080N03LSG Datasheet(PDF) 3 Page - Infineon Technologies AG

BSC080N03LSG Datasheet(HTML) 3 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL