MMBTA06 datasheet(2/7 Pages) INFINEON

Part #	MMBTA06

Description	NPN Silicon AF Transistor Low collector-emitter saturation voltage

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 7 page

2007-04-19

SMBTA06/MMBTA06

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO

Collector-base breakdown voltage

IC = 100 µA, IE = 0

V(BR)CBO

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

Collector-base cutoff current

VCB = 80 V, IE = 0

VCB = 80 V, IE = 0 , TA = 150 °C

ICBO

0.1

µA

Collector-emitter cutoff current

VCE = 60 V, IB = 0

ICEO

100

DC current gain1)

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

hFE

100

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

VCEsat

0.25

Base-emitter voltage1)

IC = 100 mA, VCE = 1 V

VBE(ON)

1.2

AC Characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

100

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

1Pulse test: t < 300µs; D < 2%

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