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MRF9080LR3 Datasheet(PDF) 7 Page - Freescale Semiconductor, Inc

Part # MRF9080LR3
Description  RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
PDF  11 Pages
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF9080LR3 Datasheet(HTML) 7 Page - Freescale Semiconductor, Inc

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MRF9080LR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
(IN FREESCALE BROADBAND GSM 900 OPTIMIZED DEMO BOARD)
0
5
10
15
20
25
30
35
Pin, INPUT POWER (WATTS)
Figure 5. Power Gain versus Output Power
f, FREQUENCY (MHz)
Figure 6. Power Gain versus Output Power
Figure 7. Power Gain and Input Return Loss
versus Frequency
Pin, INPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 8. Output Power and Efficiency versus
Input Power
Figure 9. Power Gain versus Output Power
Pout
h
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
850
870
1010
Pout = 20 W
15
16
17
18
19
20
21
0.2
0
1
1.2
16
18
19
20
1
10
100
17
Pout, OUTPUT POWER (WATTS)
1
10
100
17
18
19
20
21
Pout, OUTPUT POWER (WATTS)
1
10
100
17
18
19
20
Figure 10. Output Power and Efficiency versus Input
Power
800 mA
IDQ = 1000 mA
VDD = 26 Vdc
f = 940 MHz
T = 25
°C
600 mA
400 mA
IDQ = 600 mA
f = 940 MHz
T = 25
°C
VDD = 22 Vdc
30 Vdc
26 Vdc
VDD = 26 Vdc
IDQ = 600 mA
T = 25
°C
Gps
IRL
70 W
Pout = 20 W
70 W
890
910
930
950
970
990
1030 1050
−30
−25
−20
−15
−10
−5
0
0
10
20
30
40
50
60
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
T = 25
°C
120
110
100
90
80
70
60
50
40
30
20
10
0
1.4
1.6
1.8
0.4
0.6
0.8
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
25
°C
50
°C
85
°C
110
100
90
80
70
60
50
40
30
20
10
0
0.2
0
1
1.2
1.4
1.6
1.8
0.4
0.6
0.8
h
Pout
25
°C
85
°C
25
°C
85
°C
40
45
50
55



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