MHVIC2114R2 datasheet(2/9 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MHVIC2114R2

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-0.5, +65

Vdc

Gate-Source Voltage

VGS

-0.5, +15

Vdc

Storage Temperature Range

Tstg

- 65 to +150

°C

Operating Junction Temperature

150

°C

Input Power

dBm

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Driver Application

Stage 1, 27 Vdc, IDQ1 = 96 mA

(Pout = +0.2 W CW)

Stage 2, 27 Vdc, IDQ2 = 204 mA

Stage 3, 27 Vdc, IDQ3 = 111 mA

RθJC

11.5

7.52

5.52

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

0 (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

240

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

W-CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,

Pout = 23 dBm, 2110-2170 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel

Bandwidth @ ±5 MHz Offset. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

Gain Flatness

—

0.3

0.5

Input Return Loss

IRL

—

-13

-10

Adjacent Channel Power Ratio

ACPR

—

-60

-57

dBc

Group Delay

Delay

—

1.7

—

Phase Linearity

—

0.2

—

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