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FC808 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FC808 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 2 page ![]() 22898HA (KT)/O3196GI/82093YH (KOTO) X-7219 No.4338-1/2 FC808 Ordering number :EN4338A High-Speed Switching Composite Diode (Cathode Common) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Silicon Epitaxial Plannar Type r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a Rt i n U n i mp y tx a m e g a t l o V d r a w r o FVF IF A m 0 1 =2 7 . 00 . 1V IF A m 0 0 1 =2 9 . 02 . 1V t n e r r u C e s r e v e RIR VR V 0 5 = 1 . 0A µ VR V 0 8 = 5 . 0A µ e c n a t i c a p a C l a n i m r e t r e t n IC VR z H M 1 = f , V 0 =0 . 40 . 7F p e m i T y r e v o c e R e s r e v e Rr r t IF V , A m 0 1 = R R , V 6 = L 5 = Ω p r I 1 . 0 = r r I ,0 . 5s n r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s r e v e R k a e PV M R 5 8V e g a t l o V e s r e v e RVR 0 8V t n e r r u C e g r u SI M S F * s m 0 1 2A t n e r r u C d e i f i t c e R e g a r e v AI * O 0 0 1A m t n e r r u C d r a w r o F k a e PI * M F 0 0 3A m n o i t a p i s s i D r e w o P e l b a w o ll A* P 0 0 2W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – Note) The specifications shown above are for each individual diode. · Marking:808 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 1250A [FC808] 1:Anode 2:Anode 3:Anode 4:Cathode 5:Anode SANYO:CP5 Electrical Characteristics at Ta = 25˚C Reverse Recovery Time Test Circuit Electrical Connection ˚C ˚C Features · Composite type with 4 diodes contained in the CP package currently in use, saving the mounting space greatly. · Fast switching speed. Note) *:Unit rating. The total rating is 150% of the unit rating. 1:Anode 2:Anode 3:Anode 4:Cathode 5:Anode |
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