MRFE6S9130HSR3 datasheet(2/11 Pages) FREESCALE

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RF Device Data

Freescale Semiconductor

MRFE6S9130HR3 MRFE6S9130HSR3

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 66 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

μAdc

Gate-Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 400 μAdc)

VGS(th)

2.1

Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)

VGS(Q)

2.9

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 2.74 Adc)

VDS(on)

—

0.22

0.5

Vdc

Dynamic Characteristics (1)

Reverse Transfer Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

—

1.6

—

Output Capacitance

(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

—

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg. N-CDMA, f = 880 MHz,

Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

Gps

19.2

Drain Efficiency

ηD

30.5

—

Adjacent Channel Power Ratio

ACPR

—

-47.6

-46

dBc

Input Return Loss

IRL

—

-29

-9

1. Part internally input matched.

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