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FP205 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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FP205 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 4 page ![]() 52098HA (KT)/82494MT (KOTO) A8-9592 No.4494-1/4 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Ordering number:EN4494 FP205 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2097A [FP205] Features · Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP205 is composed of 2 chips, one being equivalent to the 2SA1416 and the other 2SC3646, which are placed in one package. Electrical Connection Marking:205 ˚C Mounted on ceramic board (250mm2 ×0.8mm) 1unit ˚C Electrical Characteristics at Ta=25˚C Mounted on ceramic board (250mm2 ×0.8mm) 1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector SANYO:PCP5 (Bottom view) 1:Base 2:Collector 3:Emitter Common 4:Collector 5:Base 6:Collector 7:Collector (Top view) r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 2 1 ) – (V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 0 1 ) – (V e g a t l o V e s a B - o t - r e t t i m EV O B E 6 ) – (V t n e r r u C r o t c e ll o CIC 1 ) – (A ) e s l u P ( t n e r r u C r o t c e ll o CI P C 2 ) – (A t n e r r u C e s a BIB 2 . 0 ) – (A n o i t a p i s s i D r o t c e ll o CPC 8 . 0W n o i t a p i s s i D r e w o P l a t o TPT 1 . 1W e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – ( ) : PNP r e t e m a r a Pl o b m y Ss n o t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 0 1 ) – ( = E 0 =0 0 1 ) – (A n t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 4 ) – ( = C 0 =0 0 1 ) – (A n n i a G t n e r r u C C D h E F V E C I , V 5 ) – ( = C A m 0 0 1 ) – ( =0 4 10 0 4 t c u d o r P h t d i w d n a B - n i a GfT V E C I , V 0 1 ) – ( = C A m 0 0 1 ) – ( = 0 2 1z H M e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 ) – ( = ) 3 1 (F p 5 . 8F p e g a t l o V n o i t a r u t a S E - CV ) t a s ( E C IC I , A m 0 0 4 ) – ( = B A m 0 4 ) – ( = ) 2 . 0 – () 6 . 0 – (V 1 . 04 . 0V e g a t l o V n o i t a r u t a S E - BV ) t a s ( E B IC I , A m 0 0 4 ) – ( = B A m 0 4 ) – ( =5 8 . 0 ) – (2 . 1 ) – (V e g a t l o V n w o d k a e r B B - CV O B C ) R B ( IC I , A µ 0 1 ) – ( = E 0 =0 2 1 ) – (V e g a t l o V n w o d k a e r B E - CV O E C ) R B ( IC R , A m 1 ) – ( = E B =∞ 0 0 1 ) – (V e g a t l o V n w o d k a e r B B - EV O B E ) R B ( IE I , A µ 0 1 ) – ( = C 0 =6 ) – (V e m i T N O - n r u Tt n o t i u c r i C t s e T d e i f i c e p s e e S0 8 ) 0 8 (s n e m i T e g a r o t St g t s t i u c r i C t s e T d e i f i c e p s e e S ) 0 0 7 ( 0 5 8 s n e m i T ll a Ftf t i u c r i C t s e T d e i f i c e p s e e S0 5 ) 0 4 (s n |
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