| Electronic Components Datasheet Search |
|
MMG20271HT1 Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
|
|
|||||||||||||||||||||||||||||
MMG20271HT1 Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
|
1 / 18 page ![]() MMG20271HT1 1 RF Device Data Freescale Semiconductor Enhancement Mode pHEMT Technology (E--pHEMT) High Linearity Amplifier The MMG20271H is a high dynamic range, low noise amplifier MMIC, housed in a QFN 3x3 standard plastic package. It is ideal for Cellular, PCS, LTE, TD--SCDMA, W--CDMA base station, wireless LAN and other systems in the 1500 to 2700 MHz frequency range. With high OIP3 and low noise figure, it can be utilized as a driver amplifier in the transmit chain and as a second stage LNA in the receive chain . Features • Frequency: 1500--2700 MHz • Noise Figure: 1.7 dB @ 2140 MHz • P1dB: 27.5 dBm @ 2140 MHz • Small--Signal Gain: 16 dB @ 2140 MHz • Third Order Output Intercept Point: 42 dBm @ 2140 MHz • Single 5 Volt Supply • Supply Current: 180 mA • 50 Ohm Operation (some external matching required) • Low Cost QFN Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) Characteristic Symbol 1500 MHz 2140 MHz 2700 MHz Unit Noise Figure NF 2.0 1.7 1.9 dB Input Return Loss (S11) IRL --16 --14 --17 dB Output Return Loss (S22) ORL --20 --22 --17 dB Small--Signal Gain (S21) Gp 18 16 14 dB Power Output @ 1dB Compression P1db 27 27.5 28 dBm Third Order Input Intercept Point IIP3 22 26 28 dBm Third Order Output Intercept Point OIP3 40 42 42 dBm 1. VDD=5 Vdc, TA =25°C, 50 ohm system, application circuit tuned for specified frequency. Table 2. Maximum Ratings Rating Symbol Value Unit Supply Voltage VDD 6 V Supply Current IDD 400 mA RF Input Power Pin 25 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. Table 3. Thermal Characteristics Characteristic Symbol Value (3) Unit Thermal Resistance, Junction to Case Case Temperature 96°C, 5 Vdc, 190 mA, no RF applied RθJC 38 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor Technical Data Document Number: MMG20271H Rev. 0, 12/2010 MMG20271HT1 1500--2700 MHz, 16 dB 27.5 dBm E--pHEMT CASE 2131--01 QFN 3x3 PLASTIC © Freescale Semiconductor, Inc., 2010. All rights reserved. |
Similar Part No. - MMG20271HT1 |
|
Similar Description - MMG20271HT1 |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |