2SA1744 datasheet(4/8 Pages) RENESAS

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Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector to emitter voltage

VCEO(SUS)

IC =

−8.0 A, IB = −0.8 A, L = 1 mH

−60

Collector to emitter voltage

VCEX(SUS)

IC =

−8.0 A, IB1 = −IB2 = −0.8 A,

VBE(OFF) = 1.5 V, L = 180

µH, clamped

−60

Collector cutoff current

ICBO

VCB =

−60 V, IE = 0

−10

µA

Collector cutoff current

ICER

VCE =

−60 V, RBE = 50 Ω, TA = 125°C

−1.0

Collector cutoff current

ICEX1

VCE =

−60 V, VBE(OFF) = 1.5 V

−10

µA

Collector cutoff current

ICEX2

VCE =

−60 V, VBE(OFF) = 1.5 V,

TA = 125

°C

−1.0

Emitter cutoff current

IEBO

VEB =

−5.0 V, IC = 0

−10

µA

DC current gain

hFE1*

VCE =

−2.0 V, IC = −1.5 A

100

DC current gain

hFE2*

VCE =

−2.0 V, IC = −3.0 A

100

400

DC current gain

hFE3*

VCE =

−2.0 V, IC = −8.0 A

Collector saturation voltage

VCE(sat)1*

IC =

−8.0 A, IB = −0.4 A

−0.3

Collector saturation voltage

VCE(sat)2*

IC =

−12 A, IB = −0.6 A

−0.5

Base saturation voltage

VBE(sat)1*

IC =

−8.0 A, IB = −0.4 A

−1.2

Base saturation voltage

VBE(sat)2*

IC =

−12 A, IB = −0.6 A

−1.5

Collector capacitance

Cob

VCB =

−10 V, IE = 0, f = 1.0 MHz

300

Gain bandwidth product

VCE =

−10 V, IC = −1.5 A

MHz

Turn-on time

ton

0.3

µs

Storage time

tstg

1.5

µs

Fall time

IC =

−8.0 A, RL = 6.3 Ω,

IB1 =

−IB2 = −0.4 A, VCC ≅ −50 V

Refer to the test circuit.

0.3

µs

3XOVH WHVW3: ≤

µV GXW\F\FOH ≤

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Marking

hFE2

100 to 200

150 to 300

200 to 400

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