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CD2397 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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CD2397 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 15 mA 50 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V IC = 200 mA 10 --- η C POUT VCC = 43 V PIN = 27 W f = 1090 MHz PW = 10 µS 40 150 % W NPN SILICON RF POWER TRANSISTOR CD2397 DESCRIPTION: The ASI CD2397 is a common base NPN Bipolar Microwave Transistor. It is designed for Pulse Applications within the 960 to 1215 MHz Avionics frequency range. FEATURES: • Common Base Pulse at 43V • All gold metallization with emitter ballast resistors for maximum reliability and superior ruggedness. • DME Cycle. Internal input Matched. • Omnigold™ Metalization System MAXIMUM RATINGS IC 5.0 A VCES 50 V VEBO 4.0 V PDISS 300 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θ JC 0.60 °C/W PACKAGE STYLE .230 2L FLG 1 = COLLECTOR 2 = BASE 3 = EMITTER |
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