A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

125

V

5.0

mA

1.0

µµµµA

1.0

5.0

V

5

V

5.0

mhos

f = 1.0 MHz

350

250

15

pF

ηηηη

f = 175 MHz

14

50

16

55

dB

%

ψ

ψ

ψ

ψ

NO DEGRADATION IN OUTPUT POWER

RF FIELD-EFFECT POWER TRANSISTOR

MRF151G

DESCRIPTION:

The

Common Source N-Channel

Enhancement-Mode MOSFET

RF Power Transistor, Designed for

175 MHz, 300 W Transmitter and

Amplifier Applications.

MAXIMUM RATINGS

40 A

125 V

±40 V

-65

-65

θθθθ

JC

0.35

PACKAGE STYLE .385X.850 4LFG

1 & 2 = DRAIN

3 & 4 = GATE

5 = SOURCE