PD55008L-E datasheet(1/15 Pages) STMICROELECTRONICS

Part #	PD55008L-E

Description	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PDF	15 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 15 page

January 2007

Rev 2

1/15

15

PD55008L-E

RF POWER transistor, LDMOST plastic family

N-Channel enhancement-mode lateral MOSFETs

General features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 8W with 17dB gain @ 500MHz / 12.5V

■ Integrated ESD protection

■ New leadless plastic package

■ Supplied in tape and reel of 3K units

■ In compliance with 2002/95/EC european

directive

Description

The PD55008L-E is a common source N-channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12V in common source mode at

frequencies up to 1GHz.

PD55008L-E boasts the excellent gain, linearity

and reliability of STH1LV latest LDMOS

technology mounted in the innovative leadless

SMD plastic package, PowerFLAT™. PD55008L-

E’s superior linearity performance makes it an

ideal solution for car mobile radio.

Pin connection

PowerFLAT™(5x5)

www.st.com

Order codes

Part number

Marking

Package

Packaging

PD55008L-E

55008

PowerFLAT™(5x5)

Tape and reel

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PD55008L-E Datasheet(PDF) 1 Page - STMicroelectronics

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