STPS30120C datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

STPS30120C

4/8

Doc ID 11213 Rev 3

Figure 6.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 7.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

100

120

140

160

180

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

δ=0.5

T =25°C

T =75°C

T =125°C

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 8.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

Figure 9.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

100

110

120

I (mA)

V (V)

T =125°C

T =25°C

T =50°C

T =75°C

T =100°C

T =150°C

100

1000

110

100

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Figure 10.

Forward voltage drop versus

forward current (per diode)

Figure 11.

Reverse safe operating area

(tp < 1 µs and Tj < 150 °C)

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

(A)

(V)

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

(A)

arm

(V)

arm

130

140

150

160

120

170

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