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2SA1869 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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2SA1869 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page  2SA1869 2006-11-09 2 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −1.0 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −1.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V hFE (1) (Note) VCE = −2 V, IC = −0.5 A 70 ― 240 DC current gain hFE (2) VCE = −2 V, IC = −2.5 A 30 ― ― Collector-emitter saturation voltage VCE (sat) IC = −2 A, IB = −0.2 A ― −0.3 −0.6 V Base-emitter voltage VBE VCE = −2 V, IC = −0.5 A ― −0.8 −1.0 V Transition frequency fT VCE = −2 V, IC = −0.5 A ― 100 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 35 ― pF Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. A1869 Characteristics indicator Part No. (or abbreviation code) |
Similar Part No. - 2SA1869 |
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Similar Description - 2SA1869 |
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