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2SA1933 Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # 2SA1933
Description  High-Current Switching Applications
PDF  4 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1933 Datasheet(HTML) 3 Page - Toshiba Semiconductor

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2SA1933
2006-11-09
3
Collector current IC (A)
VBE (sat) – IC
Collector current IC (A)
VCE (sat) – IC
Collector current IC (A)
hFE – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
Collector-emitter voltage VCE (V)
IC – VCE
Base-emitter voltage VBE (V)
IC – VBE
Common emitter
VCE = −1 V
0
0
Tc = 100°C
−25
−2
−4
−6
−8
−0.4
−0.8
−1.2
−2.0
25
−1.6
Common emitter
Tc = 25°C
0
0
IB = −10 mA
−2
−4
−6
−8
−10
−2
−4
−6
−8
−10
−100
−20
−80
−90
−70
−30
−40
−50
−60
−0.1
−0.03
−0.1
−0.3
−1
−3
−0.3
−0.5
−3
Tc = 100°C
25
Common emitter
IC/IB = 20
−10
−1
−5
−0.5
−5
−25
−0.01
−5
−10
Common emitter
IC/IB = 20
Tc = 100°C
25
−25
−3
−0.03
−0.1
−0.3
−0.5
−1
−0.3
−0.05
−0.1
−0.03
−0.01
−1
−3
−10
−10
−0.1
−0.03
−0.05
−0.1
−1
−3
−10
−30
−100
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max
(continuous)
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
DC operation
Ta = 25°C
−1
−0.3
−0.5
−3
−5
−0.3
100 ms*
−25
10
−0.03
Tc = 100°C
25
−0.1
−0.3
−3
30
50
100
300
Common emitter
VCE = −1 V
−10
500
−1



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