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2SA1933 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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2SA1933 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SA1933 2006-11-09 3 Collector current IC (A) VBE (sat) – IC Collector current IC (A) VCE (sat) – IC Collector current IC (A) hFE – IC Collector-emitter voltage VCE (V) Safe Operating Area Collector-emitter voltage VCE (V) IC – VCE Base-emitter voltage VBE (V) IC – VBE Common emitter VCE = −1 V 0 0 Tc = 100°C −25 −2 −4 −6 −8 −0.4 −0.8 −1.2 −2.0 25 −1.6 Common emitter Tc = 25°C 0 0 IB = −10 mA −2 −4 −6 −8 −10 −2 −4 −6 −8 −10 −100 −20 −80 −90 −70 −30 −40 −50 −60 −0.1 −0.03 −0.1 −0.3 −1 −3 −0.3 −0.5 −3 Tc = 100°C 25 Common emitter IC/IB = 20 −10 −1 −5 −0.5 −5 −25 −0.01 −5 −10 Common emitter IC/IB = 20 Tc = 100°C 25 −25 −3 −0.03 −0.1 −0.3 −0.5 −1 −0.3 −0.05 −0.1 −0.03 −0.01 −1 −3 −10 −10 −0.1 −0.03 −0.05 −0.1 −1 −3 −10 −30 −100 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Ta = 25°C −1 −0.3 −0.5 −3 −5 −0.3 100 ms* −25 10 −0.03 Tc = 100°C 25 −0.1 −0.3 −3 30 50 100 300 Common emitter VCE = −1 V −10 500 −1 |
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