2SA2034

2009-12-21

1

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA2034

High-Voltage Switching Applications

High voltage

High speed

Characteristic

Symbol

Rating

Unit

Collector−base voltage

−400

V

Collector−emitter voltage

−400

V

Emitter−base voltage

−7

V

DC

−2

Collector current

Pulse

−4

A

Base current

−1

A

Ta = 25°C

1

Collector power dissipation

Tc = 25°C

15

W

Junction temperature

150

°C

Storage temperature range

−55~150

°C

Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)