ZXMS6006DG

Document number: DS35142 Rev. 1 - 2

3 of 9

www.diodes.com

December 2010

© Diodes Incorporated

ZXMS6006DG

A Product Line of

Diodes Incorporated

IntelliFET

Characteristic

Symbol

Value

Units

Continuous Drain-Source Voltage

60

V

Drain-Source Voltage for Short Circuit Protection

16

V

Continuous Input Voltage

-0.5 ... +6

V

Continuous Input Current @-0.2V

No limit

mA

11

A

13

A

Continuous Source Current (Body Diode) (Note 4)

2

A

Pulsed Source Current (Body Diode)

12

A

Unclamped Single Pulse Inductive Energy,

490

mJ

Electrostatic Discharge (Human Body Model)

4000

V

Charged Device Model

1000

V

Characteristic

Symbol

Value

Units

Linear Derating Factor

1.3

10.4

W

mW/

°C

Linear Derating Factor

3.0

24

W

mW/

°C

Thermal Resistance, Junction to Ambient (Note 4)

96

°C/W

Thermal Resistance, Junction to Ambient (Note 5)

42

°C/W

Thermal Resistance, Junction to Case (Note 6)

12

°C/W

Operating Temperature Range

-40 to +150

°C

Storage Temperature Range

-55 to +150

°C

Notes:

4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.

5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.

6. Thermal resistance between junction and the mounting surfaces of drain and source pins.