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2SC3666 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3666 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 3 page  2SC3666 2004-07-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Base current IB 0.1 A Collector power dissipation PC 1000 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 30 ― ― V hFE (1) (Note) VCE = 2 V, IC = 100 mA 100 ― 320 DC current gain hFE (2) VCE = 2 V, IC = 800 mA 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 800 mA, IB = 80 mA ― ― 0.5 V Base-emitter voltage VBE VCE = 2 V, IC = 800 mA ― 0.9 1.5 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 150 ― MHz Collector output capacitance Cob VCB = 10 V, f = 1 MHz ― 13 ― pF Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7D101A Weight: 0.2 g (typ.) C3666 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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