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MMBT4124 Datasheet(PDF) 1 Page - Diodes Incorporated |
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MMBT4124 Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 3 page  MMBT4124 Document number: DS30105 Rev. 11 - 2 1 of 3 www.diodes.com January 2009 © Diodes Incorporated MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT4126) • Ideal for Medium Power Amplification and Switching • Lead, Halogen and Antimony Free, RoHS Compliant • "Green" Device (Notes 2 and 4) Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5.0 V Collector Current - Continuous (Note 1) IC 200 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 300 mW Thermal Resistance, Junction to Ambient (Note 1) RθJA 417 °C/W Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage V(BR)CBO 30 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 25 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICBO ⎯ 50 nA VCB = 20V, IE = 0V Emitter Cutoff Current IEBO ⎯ 50 nA VEB = 3.0V, IC = 0V ON CHARACTERISTICS (Note 3) DC Current Gain hFE 120 60 360 ⎯ ⎯ IC = 2.0mA, VCE = 1.0V IC = 50mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.30 V IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ 0.95 V IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.0 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Small Signal Current Gain hfe 120 480 ⎯ VCE = 1.0V, IC = 2.0mA, f = 1.0kHz Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Top View Device Schematic E B C Please click here to visit our online spice models database. |
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