MMST5551 datasheet(1/3 Pages) DIODES

Part #	MMST5551

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

MMST5551

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (MMST5401)

•

Ideal for Low Power Amplification and Switching

•

Ultra-Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 2)

•

"Green" Device (Note 3 and 4)

Mechanical Data

•

Case: SOT-323

•

Case Material: Molded Plastic, "Green" Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

•

Marking Information: K4N, See Page 3

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.006 grams (approximate)

SOT-323

Dim

Min

Max

A

0.25

0.40

B

1.15

1.35

C

2.00

2.20

D

0.65 Nominal

E

0.30

0.40

G

1.20

1.40

H

1.80

2.20

J

0.0

0.10

K

0.90

1.00

L

0.25

0.40

M

0.10

0.18

α

0

°

8

°

All Dimens ons in mm

i

E

B

C

A

M

J

L

E

D

B C

H

K

G

BE

C

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

180

V

Collector-Emitter Voltage

VCEO

160

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current - Continuous (Note 1)

IC

200

mA

Power Dissipation (Note 1)

Pd

200

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

625

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

V(BR)CBO

180

⎯

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

160

⎯

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

6.0

⎯

V

IE = 10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

50

nA

μA

VCB = 120V, IE = 0

VCB = 120V, IE = 0, TA = 100°C

Emitter Cutoff Current

IEBO

⎯

50

nA

VEB = 4.0V, IC = 0

ON CHARACTERISTICS (Note 5)

DC Current Gain

hFE

80

30

⎯

250

⎯

IC = 1.0mA, VCE = 5.0V

IC = 10mA, VCE = 5.0V

IC = 50mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.15

0.20

V

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

1.0

V

IC = 10mA, IB = 1.0mA

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

6.0

pF

VCB = 10V, f = 1.0MHz, IE = 0

Small Signal Current Gain

hfe

50

250

⎯

VCE = 10V, IC = 1.0mA, f = 1.0kHz

Current Gain-Bandwidth Product

fT

100

300

MHz

VCE = 10V, IC = 10mA, f = 100MHz

Noise Figure

NF

⎯

8.0

dB

VCE = 5.0V, IC = 200μA, RS = 1.0kΩ, f = 1.0kHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

5. Short duration pulse test used to minimize self-heating effect.

DS30173 Rev. 8 - 2

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